Etiqueta de registo: 00000nam 2200025 450
001 1975074
003 http://id.bnportugal.gov.pt/bib/catbnp/1975074
100 ## $a20171030d2014 k y0pory01030103ba
101 0# $aeng$dpor
102 ## $aPT
105 ## $aa m 000yy
106 ## $ar
200 1# $aLattice location of transition metals in silicon by means of emission channeling$fDaniel José da Silva$gorient. João Pedro Esteves de Araújo, Ulrich Whahl
210 #9 $aPorto$c[s.n.],$d2014
215 ## $aXVIII, 214 p.$cil.$d30 cm
328 #1 $aTese dout. Physics, Dep. Physics and Astronomy, Fac. de Ciências, Univ. do Porto, 2014
675 ## $a537(043)$vBN$zpor$3472534
675 ## $a546.30(043)$vBN$zpor$31245859
700 #1 $aSilva,$bDaniel José da$31695580
702 #1 $aAraújo,$bJoão Pedro Esteves de$4727$31051833
702 #1 $aWahl,$bUlrich$4727$31695584
801 #0 $aPT$bBN$gRPC
966 ## $lBN$mFGMON$sS.A. 166939 V.$x1