Etiqueta de registo: 00000nam 2200025 450
001 2025854
003 http://id.bnportugal.gov.pt/bib/catbnp/2025854
100 ## $a20190710d2019 k y0pory01030103ba
101 0# $aeng$dpor
102 ## $aPT
105 ## $aa m 000yy
106 ## $ar
200 1# $aResistive switching in MgO and Si-Ag metal-insulator-metal structures$fCatarina Dias$gorient. João Ventura, Susana Cardoso, Paulo Aguiar
210 #9 $aPorto$c[s.n.],$d2019
215 ## $aXXIV, 178, [2] p.$cil.$d30 cm
328 #1 $aTese dout. Física, Fac. de Ciências, Univ. do Porto, 2019
675 ## $a537.3(043)$vBN$zpor$31482048
675 ## $a546.4(043)$vBN$zpor$3393207
675 ## $a621.3.03(043)$vBN$zpor$31230243
675 ## $a004.2(043)$vBN$zpor$31234195
700 #1 $aDias,$bCatarina$31756953
702 #1 $93$aVentura,$bJoão$4727$31695519
702 #1 $aCardoso,$bSusana$4727$394501
702 #1 $92$aAguiar,$bPaulo$4727$31213636
801 #0 $aPT$bBN$gRPC
966 ## $lBN$mFGMON$sS.A. 172901 V.$x1